Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (35권3호 127-132)

High speed performance of Pb(Zr,Ti)O$_3$ capacitors through lattice engineering

격자 조정을 통한 PZT커패시터의 고속동작 성능

;
Yang, B.L.;

Memory R&D Division, Hynix Semiconductor Inc.;
Memory R&D Division, Hynix Semiconductor Inc.;

Abstract

High speed performance of ferroelectric Pb(Zr,Ti)$O_3$ (PZT) based capacitors is reported. La substitution up to 10% was performed to systematically lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a ($Ti_{0.9}$ /$Al_{0.1}$ )N/Pt conducting barrier composite. Ferroelectric capacitors substituted with 10% La show significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to a systematic decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. Furthermore, the samples doped with 10% La showed dramatically better retention and pulse width dependent polarization compared to the capacitors with 0% and 3% La. These capacitors show promise as storage elements in low power high density memory architectures.

Keywords

hydrogen-terminated;ferroelectric;high speed;lattice;domin;