Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (32권3호 456-460)

CONDUCTIVE SnO$_2$ THIN FILM FABRICATION BY SOL-GEL METHOD

CONDUCTIVE SnO$_2$ THIN FILM FABRICATION BY SOL-GEL METHOD

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Lee, Seung-Chul;Lee, Jae-Ho;Kim, Young-Hwan;

Dept. of Metallurgical Engineering and Materials Science, Hong Ik University;
Dept. of Metallurgical Engineering and Materials Science, Hong Ik University;

Abstract

Transparent conducting tin (IV) oxide thin films have been studies and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process condition and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.1Ω-cm and the transmittance is higher than 90% in a visible range.

Keywords

Tin(IV) oxide;Tin isopropoxide;Triethanolamine;Sol-Gel;Solar cell;