Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (55권2호 91-95)

Effect of Ag interlayer on the optical and electrical properties of ZnO thin films

Ag 중간층 두께에 따른 ZnO 박막의 광학적, 전기적 특성 연구

김현진a,b, 장진규a, 최재욱a,b, 이연학a, 허성보b, 공영민a, 김대일a,*
Hyun-Jin Kima,b, Jin-Kyu Janga, Jae-Wook Choia,b, Yeon-Hak Leea, Sung-Bo Heob, Young-Min Konga, Daeil Kima,*

a울산대학교 첨단소재공학부 b한국생산기술연구원 동남본부 첨단하이브리드생산기술센터
aSchool of Materials Science and Engineering, University of Ulsan, Ulsan 44610, Korea bKorea Institute of Industrial Technology, Yangsan 50635, Korea

DOI : 10.5695/JSSE.2022.55.2.91

Abstract

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20 nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×1021 cm-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10-3 Ω-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films.

Keywords

ZnO/Ag/ZnO; Magnetron sputtering; Visible transmittance; Electrical resistivity.