Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (35권5호 289-294)

Crystallinity and Internal Defect Observation of the ZnTe Thin Film Used by Opto-Electronic Sensor Material

광소자로 사용되는 ZnTe박박의 결정성에 따른 결함 관찰

;
Kim, B.J.;

Institute for Advanced Materials Processing, Tohoku University;
Institute for Advanced Materials Processing, Tohoku University;

Abstract

ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $mu extrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$mu extrm{m}$~1.8$mu extrm{m}$. In the thicker range than 1.8$mu extrm{m}$ was measured hardly defects.

Keywords

ZnTe;GaAs;XTEM;HREM;dislocation;