Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


한국표면공학회지 (33권2호 87-92)

Effect of fluorine doping and heat treatment for SnO$_2$ thin films on electrical properties

SnO$_2$박막의 전기적 특성에 미치는 불소 doping및 열처리 효과


선문대학교 재료공학과;기술표준원 무기화학과;
선문대학교 재료공학과;기술표준원 무기화학과;


Transparent and electrical conducting tin oxide thin films were fabricated on soda lime silicate glass by thermal chemical vapour deposition technique. Thin films were deposition from mixtures of tetramethyltin (TMT) as a precursor, oxygen or oxygen containing ozone as an oxidant and 1,1,1,2-tetrafluoroethane as a doping material. Electrical properties of fabricated tin oxide films were changed depending on substrate temperature, and the amount of dopant. Resistivity of tin oxide films was reduced by doping fluorine or heat treatment. Thin films can be optimized at TMT flow rate of 8sccm, oxygen flow rate of 150sccm, 1,1,1,2-tetrafluoroethane floe rate of 300sccm and substrate temperature $380^{circ}C$. In this conditions, the lowest resistivity of tin oxide films were $9$ imes$10^{-4}$ $Omega$cm.