Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


한국표면공학회지 (31권3호 165-170)

Fabrication of Diamoud Thin Films using RF Plasma

RF 플라즈마를 이용한 다이아몬드 박막의 제조


응용물리학과;단국대학교 서울시 용산구 한남동 산8, 140-714;
응용물리학과;단국대학교 서울시 용산구 한남동 산8, 140-714;


Deposition of diamond on silicon substrates has been performed by RF HPCVD (Helicon Plasma Chemical Vapor Deposition) from methane-hydrogen gas mixture. Growth properties and deposition condition conditions have been studies as functions of substrate temperature ($750^{circ}C$~$850^{circ}C$). Si p-type (100) wafers were used as a substrate. The chharecterizations of the gaind thin films by SEM, AFM and Raman seattring are diamond crystallites which include disordered graphit.