Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


한국표면공학회지 (25권3호 133-143)

TiN coatings by HCD plasma enhanced reactive ion plating method

HCD플라즈마를 이용한 반응성 이온플레이팅법에 의한 TiN 코팅


서울대학교 전기공학과;
서울대학교 전기공학과;


Titanium nitride(TiN) films have been prepared by HCD plasma enhanced reactive ion plating. Density and temperature of the plasma generated by the HCD were investigated. It was shown that parameters such as the substrate bias voltage(0 350V) and N2 flow rate(10 180SCCM) influenced the growth, the growth, the microstructure and the color tone of the film mostly. In order to study the interface region, surface analysis by AES combined with sputter depth profiling was performed. Microhardness of the coated TiN films were measured by micro Vickers hardness tester. Also, the effect of coating parameters on composition, coating surface and fracture morphology, grain size and growth rate were examined.