Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (43권4호 194-198)

Properties of Indium Doped Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering

Properties of Indium Doped Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering

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Bang, Joon-Ho;Park, Se-Hun;Cho, Sang-Hyun;Song, Pung-Keun;

Department of Materials Science and Engineering, Pusan National University;Nano Convergence Practical Application Center, Daegu Technopark;
Department of Materials Science and Engineering, Pusan National University;Nano Convergence Practical Application Center, Daegu Technopark;

DOI : 10.5695/JKISE.2010.43.4.194

Abstract

Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their $In_2O_3$ content (3.33-15.22 wt%). The ZIO films deposited with an $In_2O_3$ content of 9.54 wt% showed a relatively low resistivity of $9.13{ imes}10^{-4}{Omega}cm$ and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the $In_2O_3$ content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.

Keywords

ZnO;ZIO;TCO;RF magnetron sputtering;