Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


한국표면공학회지 (43권3호 154-158)

Numerical Modeling of Plasma Characteristics of ICP System with a Pulsed dc Bias

수치모델을 이용한 pulsed dc bias ICP장치의 플라즈마 특성 해석

Joo, Jung-Hoon;

군산대학교 공과대학 신소재공학과, 플라즈마 소재 응용 센터;
Department of Materials Science and Engineering and Plasma Materials Research Center, Kunsan National University;

DOI : 10.5695/JKISE.2010.43.3.154


Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.


Inductively coupled plasma;Uniformity;Fluid simulation;Pulse bias;