한국표면공학회지 (43권2호 80-85)
Surface Modification of WC-Co and SCM415 by the Ion Bombardment Process of Filtered Vacuum Arc Plasma
자장 여과 아크 이온빔 식각 공정을 이용한 WC-Co 및 SCM415 금속 소재 표면 구조 제어 연구
Lee, Seung-Hun;Yoon, Sung-Hwan;Kim, Do-Geun;Kwon, Jung-Dae;Kim, Jong-Kuk;
한국기계연구원 부설 재료연구소;
Korea Institute of Materials Science;
The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 nm/min at -600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 nm/min at -800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 nm/min to 40 nm/min at -800 V substrate bias voltage and the uniform surface treatment was available.
Ion bombardment;WC-Co;SCM415;Friction;Filtered Vacuum arc;