Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (43권2호 47-50)

Two-step Electroless Plated Pt Ohmic Contacts to p-type InGaAs

Two-step Electroless Plated Pt Ohmic Contacts to p-type InGaAs

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Im, Hung-Su;Wang, Kai;Kim, Geun-Woo;Chang, Ji-Ho;Koo, Bon-Heun;

School of Nano Advanced Materials Engineering, Changwon National University;Major of Semiconductor Physics, Korea Maritime University;
School of Nano Advanced Materials Engineering, Changwon National University;Major of Semiconductor Physics, Korea Maritime University;

DOI : 10.5695/JKISE.2010.43.2.047

Abstract

This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{circ}C$ after using Pt I bath at 50~$65^{circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.

Keywords

Pt film;p-type InGaAs;CTLM;Ohmic contact;Two-step electroless plating;